STB80NF10 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STP80NF10 - STB80NF10
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250µA, V_GS = 0
100
V
V_DS = Max rating
V_DS = Max rating @125°C
1 µA
10 µA
V_GS = ±20V
±100 nA
V_DS = V_GS, I_D = 250µA
2
3
4
V
V_GS = 10V, I_D = 40A
0.012 0.015 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =25V _, I_D =40 A
V_DS = 25V, f = 1 MHz,
V_GS = 0
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 50V, I_D = 80A,
V_GS = 10V
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Min.
Typ.
50
Max. Unit
S
5500
pF
700
pF
175
pF
135 182 nC
23
nC
51.3
nC
4/14