STB70NF3LL_06 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET

STB70NF3LL
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
Q_g
Q_gs
Q_gd
t_d(off)
t_f
Total gate charge
Gate-source charge
Gate-drain charge
Turn-off delay time
Fall time
Test conditions
Min Typ Max Unit
V_DD = 15V I_D = 35A
R_G = 4.7Ω V_GS = 4.5V
(Resistive Load Figure 16)
V_DD= 15V I_D= 70A
V_GS= 4.5V
V_DD = 15 V
I_D = 35 A
R_G = 4.7Ω, V_GS = 4.5 V
(Resistive Load Figure 16)
23
ns
165
ns
24
33
nC
8.5
nC
12
nC
27
ns
28
ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
I_SD
I_SDM(1)
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 70 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 70 A di/dt = 100A/µs
Reverse recovery charge V_DD = 20 V T_J = 150°C
Reverse recovery current (see test circuit Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
70
A
280 A
1.3
V
42
ns
52
nC
2.5
A
5/13