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STB70NF3LL_06 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET
STB70NF3LL
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VDGR Drain-gate voltage (RGS = 20 kΩ)
VGS
Gate- source voltage
ID(1)
Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
EAS (4) Single pulse avalanche energy
Tstg
Storage temperature
TJ
Operating junction temperature
1. Current limited by the package
2. Pulse width limited by safe operating area
3. ISD ≤70A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX
4. Starting TJ = 25 oC, ID = 35A, VDD = 25V
Table 2. Thermal data
Symbol
Parameter
RthJC
RthJA
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
30
30
± 16
70
50
280
100
0.67
5.5
500
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
1.5
62.5
300
Unit
°C/W
°C/W
°C
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