 English |
|
|
|
|
|
|
|
| STB70NF3LL_06 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET | |||
| |||
| ◁ |
Electrical characteristics
2
Electrical characteristics
STB70NF3LL
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min Typ Max Unit
Drain-source
V(BR)DSS Breakdown voltage
ID = 250 µA, VGS = 0
30
V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max rating
VDS = Max rating
TC = 125°C
1
µA
10 µA
IGSS
Gate-body leakage
Current (VDS = 0)
VGS = ± 16 V
±100 nA
VGS(th) Gate threshold voltage VDS = VGS
ID = 250µA 1
V
RDS(on)
Static drain-source on
resistance
VGS = 10V
VGS = 4.5V
ID = 35A
ID = 18A
0.0075 0.0095 â¦
0.010 0.012 â¦
Table 4.
Symbol
Dynamic
Parameter
gfs
Ciss
Coss
Crss
Forward
Transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
Min Typ Max Unit
VDS = 15V
ID = 35A
25
S
1650
pF
VDS = 25V f = 1MHz VGS = 0
540
pF
130
pF
4/13
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese