STB6N65M2 Datasheet, PDF (5/23 Pages) STMicroelectronics – Zener-protected

STB6N65M2, STD6N65M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 4 A, V_GS = 0
-
4A
-
16 A
-
1.6 V
t_rr
Reverse recovery time
- 260
ns
Q_rr Reverse recovery charge
I_SD = 4 A, di/dt = 100 A/µs
-
V_DD = 60 V (see Figure 15)
1.2
µC
I_RRM Reverse recovery current
- 9.2
A
t_rr
Reverse recovery time
I_SD = 4 A, di/dt = 100 A/µs
- 400
ns
Q_rr Reverse recovery charge
V_DD = 60 V, T_j = 150 °C
- 1.84
µC
I_RRM Reverse recovery current
(see Figure 15)
- 9.1
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID026762 Rev 1
5/23
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