English
Language : 

STB6N65M2 Datasheet, PDF (4/23 Pages) STMicroelectronics – Zener-protected
◁
Electrical characteristics
2
Electrical characteristics
STB6N65M2, STD6N65M2
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0, ID = 1 mA
Zero gate voltage
IDSS
drain current
IGSS
Gate-body leakage
current
VGS = 0, VDS = 650 V
VGS = 0, VDS = 650 V,
TC=125 °C
VDS = 0, VGS = ± 25 V
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 2 A
Min. Typ. Max. Unit
650
V
1 µA
100 µA
±10 µA
2
3
4
V
1.2 1.35 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VGS = 0, VDS = 100 V,
f = 1 MHz
-
226
- pF
-
12.8
-
pF
-
0.65
-
pF
Coss
(1)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0 to 520 V
-
114
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
6.5
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 4 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 6)
-
9.8
- nC
-
1.7
- nC
-
4
- nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
Min. Typ. Max. Unit
-
19
-
ns
VDD = 325 V, ID = 2 A,
-
7
-
ns
RG = 4.7 Ω, VGS = 10 V
(see Figure 13 and Figure 18)
-
6.5
-
ns
-
20
-
ns
4/23
DocID026762 Rev 1
 ▷