STB60N55F3_09 Datasheet, PDF (5/20 Pages) STMicroelectronics – N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET™ III Power MOSFET

STx60N55F3
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Packages Min.
I_{SD Source-drain current}
I_SDM ^{(1) Source-drain current (pulsed)}
DPAK-D²PAK-
I²PAK-I²PAK- -
TO-220
I_{SD Source-drain current}
I_SDM ^{(1) Source-drain current (pulsed)}
TO-220FP
-
V_SD Forward on voltage
I_SD = 65A, V_GS = 0
-
t_rr
Reverse recovery time
I_SD = 65A, V_DD = 30V
Q_rr
I_RRM
Reverse recovery charge
Reverse recovery current
di/dt = 100A/µs,
Tj = 150°C
(see Figure 17)
-
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Typ.
47
87
3.7
Max. Unit
80 A
320 A
42 A
168 A
1.5 V
ns
nC
A
Doc ID 13242 Rev 4
5/20