STB60N55F3_09 Datasheet, PDF (4/20 Pages) STMicroelectronics – N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET™ III Power MOSFET

Electrical characteristics
2
Electrical characteristics
STx60N55F3
(T_CASE= 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250µA, V_GS= 0
55
V_DS = Max rating,
V_DS = Max rating,Tc = 125°C
V
10 µA
100 µA
V_GS = ±20V
±200 nA
V_DS= V_GS, I_D = 250µA
V_GS= 10V, I_D= 32A
2
4V
6.5 8.5 mΩ
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾ Forward transconductance
V_DS =25V, I_D=32A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V_DS = 25V, f = 1MHz, V_GS=0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 27V, I_D = 65A
V_GS =10V
(see Figure 16)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
- 50
S
2200
pF
- 500
pF
25
pF
33.5 45 nC
- 12.5
nC
9.5
nC
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
t_d(on)
t_r
Turn-on delay time
Rise time
V_DD = 27V, I_D = 32A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 18)
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD = 27V, I_D = 32A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 18)
Min. Typ. Max. Unit
20
ns
-
-
50
ns
35
ns
-
-
11.5
ns
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Doc ID 13242 Rev 4