STB60N55F3_09 Datasheet, PDF (3/20 Pages) STMicroelectronics – N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET™ III Power MOSFET

STx60N55F3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
DPAK/D²PAK
Unit
TO-220 TO-220FP
IPAK/I²PAK
V_DS
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
Drain-source voltage (V_GS=0)
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
55
± 20
80
42
56
30
320
168
110
30
0.73
0.2
V
V
A
A
A
W
W/°C
dv/dt ^{(2) Peak diode recovery voltage slope}
11
V/ns
E_AS ⁽³⁾ Single pulse avalanche energy
V_ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;T_C=25°C)
T_j
Operating junction temperature
T_stg Storage temperature
1. Pulse width limited by safe operating area
2. I_SD < 80 A, di/dt < 300A/µs, V_DD < V_(BR)DSS. Tj < Tjmax
3. Starting Tj=25°C, Id=32 A, Vdd= 25 V
390
mJ
2500
V
-55 to 175
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
IPAK
Unit
DPAK
D²PAK TO-220 TO-220FP
I²PAK
Rthj-case
Thermal resistance junction-
case max
Rthj-pcb ⁽¹⁾
Thermal resistance junction-
pcb max
50
Rthj-a
Thermal resistance junction-
ambient max
T_l
Maximum lead temperature
for soldering purpose
1.36
35
100
275
5
62.5
300
°C/W
°C/W
°C/W
°C
1. When mounted on FR-4 board of 1inch², 2oz Cu
Doc ID 13242 Rev 4
3/20