STB50NF25 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 low gate charge STripFET™ Power MOSFET

STB50NF25 - STP50NF25
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Off-voltage rise time
Fall time
Test conditions
V_DD = 125 V, I_D = 22 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 13)
V_DD = 125 V, I_D = 22 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 13)
Min Typ Max Unit
45
ns
26
ns
63
ns
20
ns
Table 8. Source drain diode
Symbol
Parameter
I_SD
I_SDM
V_SD
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
Min Typ Max Unit
I_SD = 45 A, V_GS = 0
I_SD= 45 A, di/dt = 100 A/µs,
V_DD = 60 V (see Figure 18)
45 A
180 A
1.5 V
198
ns
1.5
µC
15
A
I_SD = 45 A, di/dt = 100 A/µs,
256
ns
V_DD = 60 V, Tj = 150 °C
2.2
µC
(see Figure 18)
17
A
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