STB50NF25 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 low gate charge STripFET™ Power MOSFET

STB50NF25 - STP50NF25
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D ⁽¹⁾
I_D ⁽¹⁾
I_DM ⁽²⁾
P_TOT
dv/dt ⁽³⁾
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
Peak diode recovery voltage slope
T_j
Operating junction temperature
T_stg
Storage temperature
1. Value limited by wire bonding
2. Pulse width limited by safe operating area
3. I_SD ≤ 45 A, di/dt ≤ 200 A/µs, V_DD = 80% V_(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
T_l
Maximum lead temperature for soldering purpose
Table 4. Avalanche data
Symbol
Parameter
I_AR ⁽¹⁾
E_AS ⁽²⁾
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy
1. Pulse width limited by Tjmax
2. Starting T_J= 25 °C, I_D = I_AR, V_DD = 50 V
Electrical ratings
Value
250
±20
45
28
180
160
1.28
10
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V/ns
°C
Value
0.78
62.5
300
Value
32
160
Unit
°C/W
°C/W
°C
Unit
A
mJ
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