STB50NF25 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 low gate charge STripFET™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB50NF25 - STP50NF25
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 1 mA, V_GS= 0
250
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating @125 °C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20 V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 µA
2
R_DS(on)
Static drain-source on
resistance
V_GS= 10 V, I_D= 22 A
1
µA
10 µA
±100 nA
3
4
V
0.055 0.069 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =10 V, I_D = 22 A
V_DS =25 V, f=1 MHz,
V_GS=0
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=200 V, I_D = 45 A
V_GS =10 V
(see Figure 14)
R_G Gate input resistance
f=1 MHz Gate Bias, Bias=0
Test signal level=20 mV
open drain
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Typ.
20
2670
465
70.5
68.2
12.2
33.4
1.1
Max. Unit
S
pF
pF
pF
nC
nC
nC
Ω
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