STB40NS15T4 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY™ Power MOSFET

STB40NS15
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
40
A
160 A
V_SD ⁽²⁾ Forward on voltage
I_SD = 40A, V_GS = 0
1.5 V
t_rr
Reverse recovery time I_SD = 40A, di/dt = 100A/µs,
270
ns
Q_rr
Reverse recovery charge V_DD = 100V, T_j = 150°C
200
nC
I_RRM Reverse recovery current (see Figure 15)
1.5
A
1. Pulse width limited by safe operating area.
Obsolete ^{Product(s) - Obsolete Product(s) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %}
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