STB40NS15T4 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB40NS15
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V_{(BR)DSS breakdown voltage}
I_D = 250µA, V_GS =0
150
V
) ^IDSS
Zero gate voltage
drain current (V_GS = 0)
V_DS = Max rating
V_DS = Max rating,
T_C = 125°C
1
µA
10
µA
ct(s ^IGSS
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20V
±100 nA
du ^V_GS(th) ^{Gate threshold voltage V}_DS ^{= V}_GS^{, I}_D ^{= 250µA}
2
3
4
V
Pro ^RDS(on)
Static drain-source on
resistance
V_GS = 10V, I_D = 20A
0.045 0.052 Ω
lete _{Table 6.}
so _Symbol
Dynamic
Parameter
Ob _gfs (1)
t(s) ^{- Ciss}
C_oss
uc ^Crss
rod ^td(on)
P^tr
te^td(off)
t_f
ole ^Qg
s _Qgs
Ob ^Qgd
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V_DS = 10V_, I_D = 20A
V_DS = 25V, f = 1MHz,
V_GS = 0
V_DD = 75V, I_D = 20A
R_G = 4.7Ω V_GS = 10V
(see Figure 13)
V_DD = 120V, I_D = 40A,
V_GS = 10V, R_G = 4.7Ω
(see Figure 14)
Min. Typ. Max. Unit
29.4
S
2420
pF
380
pF
160
pF
25
ns
45
ns
85
ns
35
ns
100 110 nC
17
nC
47
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
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