STB40NS15T4 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY™ Power MOSFET

STB40NS15
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V_DS
Drain-source voltage (V_GS = 0)
150
V
V_DGR
Drain-gate voltage (R_GS = 20 kΩ)
150
V
V_GS
Gate- source voltage
± 20
V
I_D
Drain current (continuous) at T_C = 25°C
40
A
I_D
t(s) ^IDM(1)
uc ^Ptot
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating Factor
rod ^dv/dt
Peak diode recovery avalanche energy
P _Tstg
Storage temperature
te _Tj
Max. operating junction temperature
le _{1. Pulse width limited by safe operating area.}
25
160
300
2
7
-65 to 175
A
A
W
W/°C
V/ns
°C
bso _{Table 3. Thermal data}
- ^O _Symbol
Parameter
t(s) ^{Rthj-case Thermal resistance junction-case max}
c Rthj-amb Thermal resistance junction-ambient max
du ^TJ
Maximum lead temperature for soldering purpose
value
0.5
62.5
300
Unit
°C/W
°C/W
°C
Pro _{Table 4. Avalanche characteristics}
te_Symbol
Parameter
ole Avalanche current, repetitive or not-repetitive
s ^IAR
(pulse width limited by Tj max)
Ob ^{Single pulse avalanche energy}
Max value Unit
40
A
E_AS
(starting Tj = 25 °C, I_D = I_AR, V_DD = 50 V)
350
mJ
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