STB35NF10_06 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220 Low gate charge STripFET™ II Power MOSFET

STB35NF10 - STP35NF10
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I_SD = 35A, V_GS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 35A,
di/dt = 100A/µs,
V_DD = 25V, T_j = 150°C
(see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
40
A
160 A
1.5 V
160
ns
720
nC
9
A
5/14