STB35NF10_06 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220 Low gate charge STripFET™ II Power MOSFET

STB35NF10 - STP35NF10
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS = 0)
V_DGR
Drain-gate voltage (R_GS = 20 kΩ)
V_GS
Gate- source voltage
I_D
Drain current (continuous) at T_C = 25°C
I_D
I_DM(1)
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
P_tot
Total dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽²⁾
Peak diode recovery voltage slope
E_AS ⁽³⁾
Single pulse avalanche energy
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤35A, di/dt ≤300A/µs, V_DD ≤V_(BR)DSS, Tj ≤T_JMAX
3. Starting T_j = 25 °C, I_D = 20A, V_DD = 80V
Value
100
100
± 20
40
28
160
115
0.77
13
300
-55 to 175
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
1.30
Rthj-amb Thermal resistance junction-ambient max
62.5
T_J
Maximum lead temperature for soldering purpose
300
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
°C/W
°C/W
°C
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