STB35NF10_06 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220 Low gate charge STripFET™ II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB35NF10 - STP35NF10
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
Zero gate voltage
drain current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250µA, V_GS =0
100
V
V_DS = max ratings
V_DS = max ratings,
T_C = 125°C
1
µA
10
µA
V_GS = ± 20V
±100 nA
V_DS = V_GS, I_D = 250µA
2
3
4
V
V_GS = 10V, I_D = 17.5A
0.030 0.035 Ω
Table 4.
Symbol
Dynamic
Parameter
Test conditions
g_fs ⁽¹⁾
Forward
transconductance
V_DS = 15V, I_D = 17.5A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1MHz,
V_GS = 0
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 50V, I_D = 17.5A
R_G = 4.7Ω V_GS = 10V
(see Figure 12)
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 80V, I_D = 35A,
V_GS = 10V
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
20
S
1550
pF
220
pF
95
pF
17
ns
60
ns
60
ns
15
ns
55
nC
12
nC
20
nC
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