STB35N60DM2 Datasheet, PDF (5/15 Pages) STMicroelectronics – Extremely low gate charge and input capacitance

STB35N60DM2
Symbol Parameter
td(on)
Turn-on
delay time
tr
Rise time
td(off)
Turn-off
delay time
tf
Fall time
Table 7: Switching times
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- 21.2 -
VDD = 300 V, ID = 14 A RG = 4.7 Ω,
VGS = 10 V (see Figure 14: "Test circuit for
-
resistive load switching times" and Figure 19:
17
-
ns
"Switching time waveform")
-
68
-
- 10.7 -
Symbol Parameter
ISD
Source-drain
current
ISDM⁽¹⁾
Source-drain
current
(pulsed)
VSD⁽²⁾
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr
recovery
charge
Reverse
IRRM recovery
current
trr
Reverse
recovery time
Reverse
Qrr
recovery
charge
Reverse
IRRM recovery
current
Table 8: Source-drain diode
Test conditions
Min. Typ. Max. Unit
-
28 A
-
112 A
VGS = 0 V, ISD = 28 A
ISD = 28 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 16: "Test circuit for inductive
load switching and diode recovery times")
-
1.6 V
- 120
ns
- 572
nC
- 10.2
A
- 215
ns
ISD = 28 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 16: "Test circuit for - 1.89
µC
inductive load switching and diode
recovery times")
- 17.7
A
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
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