STB35N60DM2 Datasheet, PDF (4/15 Pages) STMicroelectronics – Extremely low gate charge and input capacitance

Electrical characteristics
STB35N60DM2
2
Electrical characteristics
(T_case = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage
current
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
VDS = 0 V, VGS = ±25 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 14 A
Min. Typ. Max. Unit
600
V
10
µA
100
±5 µA
3
4
5
V
0.094 0.11 Ω
Symbol
Ciss
Coss
Crss
Coss
(1)
eq.
RG
Qg
Qgs
Qgd
Parameter
Input
capacitance
Output
capacitance
Reverse transfer
capacitance
Equivalent
output
capacitance
Intrinsic gate
resistance
Total gate
charge
Gate-source
charge
Gate-drain
charge
Table 6: Dynamic
Test conditions
VDS = 100 V, f = 1 MHz, VGS = 0 V
Min. Typ. Max. Unit
- 2400 -
- 110 - pF
-
2.8
-
VDS = 0 to 480 V, VGS = 0 V
- 190 - pF
f = 1 MHz, ID = 0 A
- 4.3
-
Ω
-
54
-
VDD = 480 V, ID = 28 A, VGS = 10 V (see
Figure 15: "Test circuit for gate charge
- 14.6 -
nC
behavior")
- 24.2 -
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
4/15
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