STB35N60DM2 Datasheet, PDF (1/15 Pages) STMicroelectronics – Extremely low gate charge and input capacitance

STB35N60DM2
N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2
Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
Features
Order code
VDS
STB35N60DM2 600 V
RDS(on)
max.
0.110 Ω
ID
PTOT
28 A 210 W
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Q_rr)
and time (t_rr) combined with low R_DS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STB35N60DM2
Table 1: Device summary
Marking
Package
35N60DM2
D²PAK
Packing
Tape and reel
September 2015
DocID028331 Rev 1
This is information on a product in full production.
1/15
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