STB28NM50N Datasheet, PDF (5/21 Pages) STMicroelectronics – N-channel Power MOSFETs developed using the second generation of MDmesh

STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 250 V, I_D = 10.5 A
R_G = 4.7 Ω V_GS = 10 V
(see Figure 18)
Min. Typ. Max. Unit
13.6
ns
19
ns
-
-
62
ns
52
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 21 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 21 A, di/dt = 100 A/µs
V_DD = 400 V
(see Figure 23)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 21 A, di/dt = 100 A/µs
V_DD = 400 V, T_j = 150 °C
(see Figure 23)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
21 A
-
84 A
-
1.5 V
326
ns
-
5
µC
30
A
376
ns
- 6.2
µC
33.2
A
Doc ID 17432 Rev 2
5/21