STB28NM50N Datasheet, PDF (3/21 Pages) STMicroelectronics – N-channel Power MOSFETs developed using the second generation of MDmesh

STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 D²PAK TO-247 TO-220FP
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
V_ISO
dv/dt ⁽³⁾
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuous) at
T_C = 25 °C
Drain current (continuous) at
T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;T_C=25 °C)
Peak diode recovery voltage slope
500
± 25
21
13
84
150
15
T_stg Storage temperature
T_j
Max. operating junction temperature
- 55 to 150
150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 21 A, di/dt ≤ 400 A/µs, V_DS peak ≤V_(BR)DSS, V_DD = 80% V_(BR)DSS
V
V
21 ⁽¹⁾
A
13 ⁽¹⁾
A
84 ⁽¹⁾
A
35
W
2500
V
V/ns
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 D²PAK TO-247 TO-220FP
R_thj-case Thermal resistance junction-case max
R_thj-amb
Thermal resistance junction-ambient
max
R_thj-pcb(1) Thermal resistance junction-pcb max
T_l
Maximum lead temperature for
soldering purpose
62.5
300
0.83
30
3.6
50
62.5
300
°C/W
°C/W
°C/W
°C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting Tj = 25 °C, I_D = I_AR, V_DD = 50 V)
Doc ID 17432 Rev 2
Value
7.5
300
Unit
A
mJ
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