STB28NM50N Datasheet, PDF (1/21 Pages) STMicroelectronics – N-channel Power MOSFETs developed using the second generation of MDmesh

STB28NM50N, STF28NM50N
STP28NM50N, STW28NM50N
N-channel 500 V, 0.135 Ω, 21 A D²PAK, TO-220, TO-220FP, TO-247
MDmesh™ II Power MOSFET
Features
Order codes
STB28NM50N
STF28NM50N
STP28NM50N
STW28NM50N
V_DSS
(@Tjmax)
550 V
R_DS(on)
max.
< 0.158 Ω
I_D
21 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
2
1
TO-220FP
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STB28NM50N
STF28NM50N
STP28NM50N
STW28NM50N
Marking
28NM50N
Package
D²PAK
TO-220FP
TO-220
TO-247
!-V
Packaging
Tape and reel
Tube
June 2011
Doc ID 17432 Rev 2
1/21
www.st.com
21