STB28N65M2 Datasheet, PDF (5/22 Pages) STMicroelectronics – Extremely low gate charge

STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
-
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
V_GS = 0, I_SD = 20 A
-
20 A
80 A
1.6 V
t_rr
Reverse recovery time
- 384
ns
Q_rr Reverse recovery charge
I_SD = 20 A, di/dt = 100 A/µs
-
V_DD = 60 V (see Figure 20)
5.7
µC
I_RRM Reverse recovery current
-
30
A
t_rr
Reverse recovery time
I_SD = 20 A, di/dt = 100 A/µs
-
544
ns
Q_rr Reverse recovery charge
V_DD = 60 V, T_j = 150 °C
- 8.2
µC
I_RRM Reverse recovery current
(see Figure 20)
- 30.5
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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