STB28N65M2 Datasheet, PDF (1/22 Pages) STMicroelectronics – Extremely low gate charge

STB28N65M2, STF28N65M2,
STP28N65M2, STW28N65M2
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet - preliminary data
TAB
3
1
D²PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
, TAB
Features
Order codes
STB28N65M2
STF28N65M2
STP28N65M2
STW28N65M2
V_DS R_DS(on) max
650 V
0.18 Ω
I_D
20 A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
Order codes
STB28N65M2
STF28N65M2
STP28N65M2
STW28N65M2
AM15572v1
Table 1. Device summary
Marking
Package
D²PAK
28N65M2
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
December 2014
DocID027256 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/22
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