STB28N65M2 Datasheet, PDF (3/22 Pages) STMicroelectronics – Extremely low gate charge

STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK,
TO-220, TO-247
Unit
TO-220FP
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
V_ISO
dv/dt ⁽³⁾
dv/dt⁽⁴⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T_C = 25 °C)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. I_SD ≤ 20 A, di/dt ≤ 400 A/µs; V_{DS peak} < V_(BR)DSS, V_DD=520 V
4. V_DS ≤ 520 V
± 25
20
13
80
170
20⁽¹⁾
13⁽¹⁾
30
2500
15
50
- 55 to 150
150
V
A
A
A
W
V
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
Value
D²PAK TO-220FP TO-220
Unit
TO-247
Thermal resistance
R_{thj-case junction-case max}
R_thj-pcb(1)
Thermal resistance
junction-pcb max
Thermal resistance
R_{thj-amb junction-ambient max}
0.74
4.17
0.74
°C/W
30
°C/W
62.5
50 °C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Table 4. Avalanche characteristics
Symbol
Parameter
Value
I_AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T_jmax)
2.4
E_AS
Single pulse avalanche energy (starting
T_j = 25°C, I_D = I_AR; V_DD = 50 V)
760
DocID027256 Rev 1
Unit
A
mJ
3/22
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