STB28N60DM2 Datasheet, PDF (5/20 Pages) STMicroelectronics – Extremely low gate charge and input capacitance

STB28N60DM2, STP28N60DM2, STW28N60DM2
Table 8: Source-drain diode
Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD⁽¹⁾ Source-drain current
-
21 A
ISDM⁽²⁾
Source-drain current
(pulsed)
-
84 A
VSD⁽³⁾ Forward on voltage
VGS = 0 V, ISD = 21 A
-
1.6 V
trr
Reverse recovery time
ISD = 21 A, di/dt = 100 A/µs,
- 140
ns
Qrr Reverse recovery charge
VDD = 60 V (see Figure 20:
- 0.5
"Test circuit for inductive load
µC
IRRM Reverse recovery current
switching and diode recovery
-
7.4
times")
A
trr
Reverse recovery time
ISD = 21 A, di/dt = 100 A/µs,
- 309
ns
Qrr Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 20: "Test circuit for
- 2.6
µC
IRRM Reverse recovery current
inductive load switching and
diode recovery times")
- 16.8
A
Notes:
(1) _{Limited by maximum junction temperature.}
(2) _{Pulse width is limited by safe operating area.}
(3) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID027040 Rev 4
5/20