STB28N60DM2 Datasheet, PDF (4/20 Pages) STMicroelectronics – Extremely low gate charge and input capacitance

Electrical characteristics
STB28N60DM2, STP28N60DM2, STW28N60DM2
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
VDS = 0 V, VGS = ±25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 10.5 A
Min. Typ. Max. Unit
600
V
1
µA
100
±10 µA
3
4
5
V
0.13 0.16 Ω
Symbol
Ciss
Coss
Crss
Coss eq.⁽¹⁾
RG
Qg
Qgs
Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6: Dynamic
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
VDS = 0 to 480 V, VGS = 0 V
f = 1 MHz, ID = 0 A
VDD = 480 V, ID = 21 A,
VGS = 10 V (see Figure 19:
"Test circuit for gate charge
behavior")
Min. Typ. Max. Unit
- 1500 -
-
70
-
pF
-
1.6
-
- 134 - pF
- 4.6
-
Ω
-
34
-
-
8
- nC
- 18.5 -
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
Table 7: Switching times
Test conditions
VDD = 300 V, ID = 10.5 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 18: "Test circuit for
resistive load switching times"
and Figure 23: "Switching time
waveform")
Min. Typ. Max. Unit
-
16
-
- 7.3 -
-
53
-
ns
- 9.3 -
4/20
DocID027040 Rev 4