STB28N60DM2 Datasheet, PDF (1/20 Pages) STMicroelectronics – Extremely low gate charge and input capacitance

STB28N60DM2, STP28N60DM2,
STW28N60DM2
N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2
Power MOSFETs in D²PAK, TO-220 and TO-247 packages
Datasheet - production data
Features
Order code
STB28N60DM2
STP28N60DM2
STW28N60DM2
VDS @
TJmax.
600 V
RDS(on)
max.
ID
PTOT
0.16 Ω 21 A 170 W
Figure 1: Internal schematic diagram
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Order code
STB28N60DM2
STP28N60DM2
STW28N60DM2
Description
These high voltage N-channel Power MOSFETs
are part of the MDmesh™ DM2 fast recovery
diode series. They offer very low recovery charge
(Qrr) and time (trr) combined with low RDS(on),
rendering them suitable for the most demanding
high efficiency converters and ideal for bridge
topologies and ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packing
D²PAK
Tape and reel
28N60DM2
TO-220
Tube
TO-247
Tube
December 2015
DocID027040 Rev 4
This is information on a product in full production.
1/20
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