STB26NM60ND Datasheet, PDF (5/23 Pages) STMicroelectronics – Low input capacitance and gate charge

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
2
Electrical characteristics
Electrical characteristics
(T_CASE=25 °C unless otherwise specified).
Symbol
Parameter
Table 5. On/off states
Test conditions
Value
Unit
Min. Typ. Max.
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source
on- resistance
I_D = 1 mA, V_GS = 0
600
V
V_DS = 600 V
V_DS = 600 V @T_C= 125 °C
1 µA
100 µA
V_GS = ± 25 V
±100 nA
V_DS = V_GS, I_D = 250 µA
3
4
5
V
V_GS = 10 V, I_D = 10.5 A
0.145 0.175 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 100 V, f = 1 MHz,
V_GS = 0
- 1817 -
pF
-
90
-
pF
-
4.4
-
pF
C_oss
(1)
eq.
Equivalent output
capacitance
V_GS = 0, V_DS = 0 to 480 V -
270
-
pF
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 300 V, I_D = 10.5 A
-
22
-
ns
R_G = 4.7 Ω V_GS = 10 V
- 14.5 -
ns
(see Figure 23),
-
69
-
ns
(see Figure 18)
- 27.5 -
ns
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 480 V, I_D = 21 A,
V_GS = 10 V,
(see Figure 19)
- 54.6 -
nC
-
9.1
-
nC
- 32.5 -
nC
R_g Intrinsic gate resistance
f = 1 MHz, I_D = 0
-
2.5
-
Ω
1. C_{oss eq}. is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
DocID025283 Rev 1
5/23
23