STB26NM60ND Datasheet, PDF (3/23 Pages) STMicroelectronics – Low input capacitance and gate charge

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK, TO-220,
TO-247
TO-220FP
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
dv/dt⁽³⁾
dv/dt⁽⁴⁾
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
V_ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T_C=25 °C)
T_stg
Storage temperature
T_J
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 21 A, di/dt ≤ 400 A/µs, V_DD = 80% V_(BR)DSS
4. V_DS ≤ 480 V
600
±25
21
13
84
190
40
40
21⁽¹⁾
13⁽¹⁾
84(1)
35
2500
–55 to 150
150
Unit
V
V
A
A
A
W
V/ns
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
D²PAK TO-220FP TO-220
TO-247
R_thj-case
R_thj-amb
R_thj-pcb(1)
Thermal resistance junction-
case max
Thermal resistance junction-
ambient max
Thermal resistance junction-
pcb max
0.66
30
3.57
62.5
0.66
50
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Unit
°C/W
°C/W
°C/W
DocID025283 Rev 1
3/23
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