STB26NM60ND Datasheet, PDF (1/23 Pages) STMicroelectronics – Low input capacitance and gate charge

STB26NM60ND, STF26NM60ND,
STP26NM60ND, STW26NM60ND
N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
TAB
3
1
D² PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
Features
Order codes V_DS @ T_jmax R_DS(on) max I_D
STB26NM60ND
STF26NM60ND
STP26NM60ND
650 V
0.175 21 A
STW26NM60ND
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
'7$%
Applications
• Switching applications
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6
!-V
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes
STB26NM60ND
STF26NM60ND
STP26NM60ND
STW26NM60ND
Table 1. Device summary
Marking
Packages
D²PAK
26NM60ND
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
November 2013
This is information on a product in full production.
DocID025283 Rev 1
1/23
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