STB25NM60ND Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247

STP/F25NM60ND - STB25NM60ND - STI25NM60ND - STW25NM60ND Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 21 A, V_GS = 0
I_SD = 21 A, V_DD = 60 V
di/dt=100 A/µs
(see Figure 20)
I_SD = 21 A,V_DD = 60 V
di/dt=100 A/µs,
T_J = 150 °C
(see Figure 20)
21 A
84 A
1.3 V
160
ns
1
µC
15
A
230
ns
2
µC
19
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
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