STB25NM60ND Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247

STB25NM60ND-STI25NM60ND
STF/P25NM60ND-STW25NM60ND
N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Power MOSFET
D²PAK - I²PAK - TO-220FP - TO-220 - TO-247
Features
Type
STB25NM60ND
STI25NM60ND
STF25NM60ND
STP25NM60ND
STW25NM60ND
V_DSS @
T_JMAX
650 V
R_DS(on) max I_D
0.16 Ω
21 A
21 A
21 A⁽¹⁾
21 A
21 A
1. Limited only by maximum temperature allowed
■ The worldwide best R_DS(on)*area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in ZVS
phase-shift converters.
Table 1. Device summary
Order codes
Marking
STB25NM60ND
STI25NM60ND
STF25NM60ND
STP25NM60ND
STW25NM60ND
25NM60ND
25NM60ND
25NM60ND
25NM60ND
25NM60ND
April 2008
Rev 3
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
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