STB25NM60ND Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247

Electrical characteristics STP/F25NM60ND - STB25NM60ND - STI25NM60ND - STW25NM60ND
2
Electrical characteristics
4/18
(T_CASE=25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Value
Unit
Min. Typ. Max.
Drain-source
V_{(BR)DSS breakdown voltage}
I_D = 1 mA, V_GS = 0
600
dv/dt⁽¹⁾
Drain source voltage slope
V_DD= 480 V, I_D= 21 A,
V_GS= 10 V
I_DSS
Zero gate voltage
drain current (V_GS = 0)
V_DS = Max rating
V_DS = Max rating @125 °C
I_GSS
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V
V_GS(th) Gate threshold voltage
V_DS = V_GS, I_D = 250 µA
3
R_DS(on) Static drain-source on
resistance
V_GS = 10 V, I_D = 10.5 A
48
4
0.13
V
V/ns
1 µA
100 µA
100 nA
5
V
0.16 Ω
1. Characteristic value at turn off on inductive load
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 15 V_, I_D = 10.5 A
V_DS = 50 V, f = 1 MHz,
V_GS = 0
17
S
pF
2400
pF
150
pF
15
C_oss
(2)
eq.
Equivalent output
capacitance
V_GS = 0, V_DS = 0 to 480 V
320
pF
t_d(on) Turn-on delay time
V_DD = 300 V, I_D = 10.5 A
60
ns
t_r
Rise time
R_G = 4.7 Ω V_GS = 10 V
30
ns
t_d(off) Turn-off delay time
(see Figure 23),
50
ns
t_f
Fall time
(see Figure 18)
40
ns
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 480 V, I_D = 21 A,
V_GS = 10 V,
(see Figure 19)
80
nC
40
nC
15
nC
f=1 MHz Gate DC Bias=0
R_g Gate input resistance
Test signal level = 20 mV
1.6
Ω
Open drain
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C_{oss eq}. is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS