STB24NF10_06 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET

STB24NF10 - STP24NF10
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD= 24A, V_GS=0
I_SD= 24A,
di/dt = 100A/µs,
V_DD= 30V, Tj=150°C
(see Figure 14)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
26 A
104 A
1.5 V
100
ns
375
nC
7.5
A
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