STB24NF10_06 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET

STB24NF10 - STP24NF10
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS = 0)
V_DGR Drai-gate voltage (R_GS=20kΩ)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25°C
I_D
I_DM ⁽¹⁾
Drain current (continuous) at T_C=100°C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
dv/dt ⁽²⁾ Peak diode recovery voltage slope
E_AS(3) Single pulse avalanche energy
T_J
Operating junction temperature
T_stg
Storage temperature
1. Pulse width limited by safe operating area.
2. I_SD < 24A, di/dt < 300A/µs, V_DD=80%V_(BR)DSS
3. Starting Tj = 25°C, I_D=12A, V_DD=30V
Table 2. Thermal resistance
Symbol
Parameter
R_thj-case
R_thj-amb
T_j
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
Electrical ratings
Value
100
100
± 20
26
18
104
85
0.57
9
220
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
1.76
62.5
300
Unit
°C/W
°C/W
°C
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