STB24NF10_06 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB24NF10 - STP24NF10
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250µA, V_GS= 0
100
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating @125°C
1
µA
10 µA
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20V
±100 nA
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250µA
2
3
4
V
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 12A
0.055 0.060 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min. Typ.
g_fs ⁽¹⁾ Forward transconductance ^V_DS ^{= 15V, I}_D ^{= 12A}
10
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
870
V_DS =25V, f=1 MHz, V_GS=0
125
50
Q_{g Total gate charge}
V_DD= 80V, I_D = 24A
30
Q_gs Gate-source charge
V_GS =10V
6
Q_gd Gate-drain charge
(see Figure 7)
10
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Max.
41
Unit
S
pF
pF
pF
nC
nC
nC
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD=50V, I_D= 12A,
R_G=4.7Ω, V_GS=10V
(see Figure 12)
Min. Typ. Max. Unit
60
ns
15
ns
50
ns
20
ns
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