STB20NM60-1 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh™ Power MOSFET

STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 300 V, I_D = 10 A
R_G = 4.7Ω V_GS = 10 V
(see Figure 15)
Min. Typ. Max. Unit
25
ns
20
ns
42
ns
11
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 20 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD =20A, di/dt=100A/µs,
V_DD = 60 V
(see Figure 20)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD =20A, di/dt=100A/µs,
T_j = 150°C, V_DD = 60 V
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
390
5
25
510
6.5
26
Max Unit
20 A
80 A
1.5 V
ns
µC
A
ns
µC
A
5/18