STB20NM60-1 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh™ Power MOSFET

STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220/D²PAK
I²PAK/TO-247
TO-220FP
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
dv/dt ⁽³⁾
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
Peak diode recovery voltage slope
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T_C=25°C)
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD < 20A, di/dt < 400A/µs, V_DD < V_(BR)/DSS, Tj < T_JMAX
600
±30
20
20 ⁽¹⁾
12.6
12.6 ⁽¹⁾
80
80 ⁽¹⁾
192
45
1.5
0.36
15
--
2500
-65 to 150
150
Unit
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
T_l
Maximum lead temperature for soldering
purpose
TO-220/D²PAK
I²PAK/TO-247
TO-220FP
0.65
2.8
62.5
Unit
°C/W
°C/W
300
°C
Table 4. Avalanche data
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_j max)
Single pulse avalanche energy
E_AS
(starting T_j = 25 °C, I_D = I_AS, V_DD = 50 V)
Max. value
Unit
10
A
650
mJ
3/18