STB20NM60-1 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh™ Power MOSFET

Electrical characteristics
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min.
I_D = 250 µA, V_GS = 0
600
V_DS = Max rating
V_DS= Max rating,@125°C
V_GS = ± 30V
V_DS = V_GS, I_D = 250 µA
3
V_GS = 10V, I_D = 10 A
Typ. Max. Unit
V
1
µA
10 µA
±100 nA
4
5
V
0.25 0.29 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾
Forward transconductance ^{VDS > ID(on) x RDS(on)max,}
I_D = 10 A
11
S
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1 MHz,
V_GS = 0
pF
1500
pF
350
pF
35
C_{oss eq.} ⁽²⁾
Equivalent output
capacitance
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
R_g Gate input resistance
V_GS = 0V, V_DS = 0V to
480 V
V_DD = 480 V, I_D = 20 A,
V_GS = 10V
(see Figure 16)
f = 1 MHz Gate DC
bias=0 Test signal
level = 20 mV
open drain
215
pF
39
54 nC
10
nC
20
nC
1.6
Ω
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS.
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