STB20NM50_07 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh™ Power MOSFET

STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
t_r(Voff)
t_f
t_c
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V_DD=250 V, I_D=10A,
R_G=4.7Ω, V_GS=10V
(see Figure 14)
V_DD=400 V, I_D=20A,
R_G=4.7Ω, V_GS=10V
(see Figure 16)
Min. Typ. Max. Unit
24
ns
16
ns
40
ns
12
ns
9
ns
8.5
ns
23
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
I_{SD Source-drain current}
I_SDM ^{(1) Source-drain current (pulsed)}
V_SD ⁽²⁾ Forward on voltage
I_SD=20A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=20A,di/dt=100A/µs,
V_DD=100 V, Tj= 25°C
(see Figure 16)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=20A,di/dt=100A/µs,
V_DD=100 V, Tj=150°C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration 300µs duty cycle 1.5%
20
A
80
A
1.5
V
350
ns
4.6
µC
26
A
435
ns
5.9
µC
27
A
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