STB20NM50_07 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh™ Power MOSFET

Electrical characteristics
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250µA, V_GS= 0
500
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating @125°C
1
µA
10 µA
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±30V
±100 µA
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 µA
3
4
5
V
R_DS(on)
Static drain-source on
resistance
V_GS= 10 V, I_D= 10 A
0.20 0.25 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾
Forward transconductance ^{VDS > ID(ON) x RDS(ON)max,}
I_D = 10A
10
S
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =25V, f=1 MHz,
V_GS=0
1480
pF
285
pF
34
pF
C_{oss eq. Equivalent output}
(2) capacitance
V_GS=0, V_DS =0V to 400V
130
pF
f=1MHz Gate DC Bias=0
Rg Gate input resistance
Test Signal Level=20mV
1.6
Ω
Open Drain
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=400V, I_D = 20A
V_GS =10V
(see Figure 15)
40 56 nC
13
nC
19
nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
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