STB20NM50_07 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh™ Power MOSFET

STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS Drain source voltage
V_GS Gate-source voltage
I_D
Drain current (continuous) at T_C = 25°C
I_D
Drain current (continuous) at T_C = 100°C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
dv/dt ^{(3) Peak diode recovery voltage slope}
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T_C=25°C)
T_j
Operating junction temperature
T_stg
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD < 20A, di/dt < 400A/µs, V_DD < V_(BR)DSS, T_J < T_JMAX
Value
D²PAK / I²PAK
TO-220
TO-220FP
20
12.6
80
192
1.54
500
± 30
20 ⁽¹⁾
12.6 ⁽¹⁾
80 ⁽¹⁾
45
0.36
15
Unit
V
V
A
A
A
W
W/°C
V/ns
--
2500
V
-65 to 150
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
T_l
Thermal resistance junction-case max
Thermal resistance junction-amb max
Maximum lead temperature for soldering
purpose
Value
D²PAK / I²PAK
TO-220
TO-220FP
Unit
0.65
2.8
62.5
°C/W
°C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
I_AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting Tj=25°C, I_D= 5A, V_DD= 50V)
Value
10
650
Unit
A
mJ
3/14