STB20NM50FD_08 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET

STB20NM50FD - STF20NM50FD - STP20NM50FD
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_r(Voff)
t_f
t_c
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V_DD = 250 V, I_D = 10 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15)
V_DD = 400 V, I_D = 20 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15)
Min Typ Max Unit
22
ns
20
ns
6
ns
15
ns
30
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 20 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD =20 A, di/dt =100 A/µs,
V_DD = 60 V, T_J=150 °C
(see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
20 A
80 A
1.5 V
245
ns
2
nC
16
A
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