English
Language : 

STB20NM50FD_08 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET
◁
Electrical characteristics
STB20NM50FD - STF20NM50FD - STP20NM50FD
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
500
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,@125 °C
1 µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 30 V
± 100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 10 A
0.22 0.25 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs(1)
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID= 10 A
9
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f =1 MHz,
VGS = 0
1380
pF
290
pF
40
pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
130
pF
f=1 MHz Gate DC Bias=0
Rg Gate input resistance
Test signal level=20 mV
2.8
Ω
open drain
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 400 V, ID = 20 A
VGS = 10 V
(see Figure 16)
38 53 nC
18
nC
10
nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/16
 ▷