STB20NM50FD_08 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET

STB20NM50FD - STF20NM50FD - STP20NM50FD
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS=0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
dv/dt ^{(3) Peak diode recovery voltage slope}
V_ISO
T_stg
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t=1 s;T_C=25 °C)
Storage temperature
T_j
Operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 20 A, di/dt ≤ 200 A/µs, V_DD = 80% V_(BR)DSS
Value
D²PAK
TO-220
Unit
TO-220FP
500
V
± 30
V
20
20 ⁽¹⁾
A
14
14⁽¹⁾
A
80
80⁽¹⁾
A
192
45
W
20
V/ns
--
2500
V
-65 to 150
°C
150
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-amb
R_thj-pcb
T_l
Thermal resistance junction-case max
Thermal resistance junction-amb max
Thermal resistance junction-pcb max
Maximum lead temperature for
soldering purposes
TO-220 D²PAK
0.65
62.5
--
--
30
300
TO-220FP Unit
2.8
°C/W
62.5
°C/W
--
°C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting Tj = 25 °C, I_D = I_AS, V_DD = 35 V)
Max value
Unit
10
A
700
mJ
3/16