STB19NF20 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 200V - 0.15Ω - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY™ Power MOSFET

STB19NF20 - STF9NF20 - STP19NF20
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
Test conditions
V_DD=100 V, I_D= 7.5A,
R_G=4.7Ω, V_GS=10V
(see Figure 15)
V_DD = 100 V, I_D = 7.5A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 15)
Min. Typ. Max. Unit
11.5
ns
22
ns
19
ns
11
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD Source-drain current
I_SDM(1) Source-drain current (pulsed)
V_SD(2) Forward on voltage
I_SD=15A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=15A, V_DD=50V
di/dt = 100A/µs,
(see Figure 20)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=15A, V_DD=50V
di/dt = 100A/µs,
Tj=150°C (see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ. Max Unit
15 A
60 A
1.6 V
125
ns
0.55
µC
8.8
A
148
ns
0.73
µC
9.9
A
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