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STB19NF20 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 200V - 0.15Ω - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY™ Power MOSFET
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STB19NF20 - STF9NF20 - STP19NF20
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VGS
Gate-source voltage
ID
Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating factor
VISO
dv/dt(3)
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
Peak diode recovery voltage slope
TJ
Operating junction temperature
Tstg
Storage temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD ≤15A, di/dt ≤300A/µs, VDD = 80%V(BR)DSS
Value
Unit
TO-220 / D²PAK TO-220FP
200
± 20
15
9.45
60
90
0.72
15(1)
9.45(1)
60 (1)
25
0.2
V
V
A
A
A
W
W/°C
--
2500
V
15
-55 to 150
V/ns
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-pcb
Rthj-a
Tl
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220 D²PAK TO-220FP
1.39
--
50
62.5
5
°C/W
--
°C/W
300
°C
Table 3. Avalanche data
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj Max)
15
A
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=Iar, Vdd=50V)
110
mJ
3/16
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